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FGAF40N60UF IGBT FGAF40N60UF Ultrafast IGBT General Description Fairchild's UF series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UF series is designed for applications such as motor control and general inverters where high speed switching is a required feature. Features * High speed switching * Low saturation voltage : VCE(sat) = 2.3 V @ IC = 20A * High input impedance Applications AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3PF GCE E Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) PD TJ Tstg TL TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1/8" from Case for 5 Seconds @ TC = 25C @ TC = 100C @ TC = 25C @ TC = 100C FGAF40N60UF 600 20 40 20 160 100 40 -55 to +150 -55 to +150 300 Units V V A A A W W C C C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. --Max. 1.2 40 Units C/W C/W (c)2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A FGAF40N60UF Electrical Characteristics of the IGBT T Symbol Parameter C = 25C unless otherwise noted Test Conditions Min. Typ. Max. Units Off Characteristics BVCES BVCES/ TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coefficient of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA VGE = 0V, IC = 1mA VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V 600 ----0.6 ----250 100 V V/C uA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 20mA, VCE = VGE IC = 20A, VGE = 15V IC = 40A, VGE = 15V 3.5 --5.1 2.3 3.1 6.5 3.0 -V V V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---1075 170 50 ---pF pF pF Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Le Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Internal Emitter Inductance ------------------15 30 65 35 470 130 600 30 37 110 80 500 310 810 77 20 25 14 --130 100 --1000 --200 250 --1200 150 30 40 -ns ns ns ns uJ uJ uJ ns ns ns ns uJ uJ uJ nC nC nC nH VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 25C VCC = 300 V, IC = 20A, RG = 10, VGE = 15V, Inductive Load, TC = 125C VCE = 300 V, IC = 20A, VGE = 15V Measured 5mm from PKG (c)2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A FGAF40N60UF 160 Common Emitter Tc = 25 120 20V 80 70 Common Emitter VGE=15V Tc= 25 Tc= 125 Collector Current , Ic (A) 8 15V Collector Current, Ic (A) 60 50 40 30 20 10 80 12V VGE = 10V 40 0 0 2 4 6 0 0.5 1 10 Collector-Emitter Voltage,VCE(V) Collector-Emitter Voltage, VCE(V) Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 30 Vcc = 300V Load Current : peak of square wave 25 4 Common Emitter Vge=15V Collector - Emitter Voltage, VCE [V] 3 40A 2 20A Ic=10A Load Current [A] 20 15 10 1 5 0 0 30 60 90 120 150 Duty cycle : 50% Tc = 100 Powe Dissipation = 24W 0.1 1 10 100 1000 0 Case Temperature, TC [] Frequency [kHz] Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level Fig 4. Load Current vs. Frequency 20 20 [V] CE Collector - Emitter Voltage, V 12 Collector - Emitter Voltage, V CE 16 [V] Common Emitter TC = 25 Common Emitter TC = 125 16 12 8 40A 8 40A 4 Ic=10A 0 20A 4 IC = 10A 0 0 4 8 20A 12 16 20 0 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Gate - Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE (c)2004 Fairchild Semiconductor Corporation Fig 6. Saturation Voltage vs. VGE FGAF40N60UF Rev. A FGAF40N60UF 3000 Common Emitter VGE = 0V, f = 1MHz TC = 25 Cies 300 Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125 - - - Ton 2500 Switching Time (ns) Capacitance (pF) 2000 Coes 100 Tr 1500 1000 Cres 500 0 1 10 30 10 1 10 100 200 Collector-Emitter Voltage, VCE (V) Gate Resistance, RG( ) Fig 7. Capacitance Characteristics Fig 8. Turn-On Characteristics vs. Gate Resistance 1000 Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125 2000 Common Emitter Vcc=300V,VGE= 15V Ic=20A Tc = 25 Tc = 125 1000 Switching Time (ns) Switching Time (uJ) Toff Eon Eoff 100 Tf 100 Tf 20 1 10 100 200 50 1 10 100 200 Gate Resistance, RG( ) Gate Resistance, RG( ) Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 200 1000 Common Emitter VCC = 300V, VGE = 15V 100 RG = 10 Switching Time [nS] TC = 25 TC = 125 Switching Time (ns) Toff 100 Toff Tf Ton Common Emitter V CC = 300V, VGE = 15V 10 Tr R G = 10 TC = 25 TC = 125 Tf 20 10 15 20 25 30 35 40 10 15 20 25 30 35 40 Collector Current, Ic (A) Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current (c)2004 Fairchild Semiconductor Corporation Fig 12. Turn-Off Characteristics vs. Collector Current FGAF40N60UF Rev. A FGAF40N60UF 3000 15 Common Emitter RL=15 Gate-Emitter Voltage, V GE (V) 1000 12 (Tc=25 ) 300V Switching Time (uJ) 9 200V Vcc=100V Eon 100 Eoff Eoff Common Emitter VCC = 300V, VGE = 15V RG = 10 TC = 25 TC = 125 10 10 15 20 25 30 35 40 6 3 0 0 30 60 90 120 Collector Current , Ic (A) Gate Charge, Qg (nC) Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 500 Ic MAX (Pulsed) 100 100 Collector Current, Ic [A] 50s Ic MAX (Continuous) 10 1ms 100s Collector Current, IC [A] 10 DC Operation 1 Single Nonrepetitive o Pulse Tc = 25 C Curves must be derated linearly with increase in temperature 1 10 100 1000 1 Safe Operating Area o V GE=20V, TC=100 C 0.1 1 10 100 1000 0.1 Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics Thermal Response [Zthjc] 1 0 .5 0 .2 0 .1 0 .1 0 .0 5 0 .0 2 0 .0 1 0 .0 1 sin gle p ulse 1 E -5 1 E -4 1 E -3 0 .0 1 0 .1 Pdm t1 t2 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1 10 Rectangular Pulse Duration [sec] Fig 17. Transient Thermal Impedance of IGBT (c)2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A FGAF40N60UF Package Dimensions TO-3PF 5.50 0.20 4.50 0.20 15.50 0.20 o3.60 0.20 3.00 0.20 (1.50) 10.00 0.20 10 26.50 0.20 23.00 0.20 16.50 0.20 14.50 0.20 0.85 0.03 16.50 0.20 2.00 0.20 1.50 0.20 14.80 0.20 2.00 0.20 2.00 0.20 4.00 0.20 0.75 -0.10 +0.20 2.00 0.20 2.50 0.20 2.00 0.20 3.30 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.90 -0.10 +0.20 3.30 0.20 2.00 0.20 5.50 0.20 Dimensions in Millimeters (c)2004 Fairchild Semiconductor Corporation FGAF40N60UF Rev. A 22.00 0.20 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. FACT Quiet SeriesTM ACExTM FAST(R) ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM EnSignaTM I2CTM ImpliedDisconnectTM FACTTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2004 Fairchild Semiconductor Corporation Rev. I8 |
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